Modelos De Microondas Para Dispositivos Ambipolares De Grafeno

Perspectiva de la docencia universitaria en ingeniería

Autores/as

  • Francisco Pasadas Laboratorio PEARL, Departamento de Electrónica y Tecnología de Computadores Universidad de Granada
  • Alberto Medina-Rull Laboratorio PEARL, Departamento de Electrónica y Tecnología de Computadores Universidad de Granada
  • Enrique G. Marín Laboratorio PEARL, Departamento de Electrónica y Tecnología de Computadores Universidad de Granada

DOI:

https://doi.org/10.37467/revtechno.v11.4457

Palabras clave:

Ambipolar, Amplificador de potencia, Desfasador, Grafeno, Ingeniería, Mezclador, Multiplicador, Radiofrecuencia

Resumen

En este trabajo, se implementan un conjunto de modelos que resuelven la física de los transistores basados en grafeno, capturando la conducción ambipolar y proporcionando las peculiares curvas de corriente frente a voltaje de puerta con forma de “V”. Estas herramientas pueden ser potencialmente utilizadas por estudiantes de ingeniería para explorar la electrónica ambipolar, abriendo la posibilidad de 1) rediseñar y simplificar aplicaciones de microondas convencionales; y 2) buscar nuevas funcionalidades en el ámbito analógico y de alta frecuencia. A este respecto, como ejemplo, presentamos nuevos enfoques para el diseño de multiplicadores de frecuencia, amplificadores de potencia, mezcladores y desfasadores en radiofrecuencia que específicamente aprovechan la ambipolaridad

Citas

Chaves, Ferney A., Jiménez, David, Sagade, Abhay A., Kim, Wonjae, Riikonen, Juha, Lipsanen, Harri, & Neumaier, Daniel. (2015). A physics-based model of gate-tunable metal–graphene contact resistance benchmarked against experimental data. 2D Materials, 2(2), 025006. https://doi.org/10.1088/2053-1583/2/2/025006

Cusati, Teresa, Fiori, Gianluca, Gahoi, Amit, Passi, Vikram, Lemme, Max C., Fortunelli, Alessandro, & Iannaccone, Giuseppe. (2017). Electrical properties of graphene-metal contacts. Scientific Reports, 7(1), 5109. https://doi.org/10.1038/s41598-017-05069-7

Das, Saptarshi, Demarteau, Marcel, & Roelofs, Andreas. (2014). Ambipolar Phosphorene Field Effect Transistor. ACS Nano, 8(11), 11730–11738. https://doi.org/10.1021/nn505868h

Gahoi, Amit, Kataria, Satender, Driussi, Francesco, Venica, Stefano, Pandey, Himadri, Esseni, David, Selmi, Luca, & Lemme, Max C. (2020). Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions. Advanced Electronic Materials, 6(10), 2000386. https://doi.org/10.1002/aelm.202000386

Giubileo, Filippo, & Di Bartolomeo, Antonio. (2017). The role of contact resistance in graphene field-effect devices. Progress in Surface Science, 92(3), 143–175. https://doi.org/10.1016/j.progsurf.2017.05.002

Habibpour, Omid, Cherednichenko, Sergey, Vukusic, Josip, Yhland, Klas, & Stake, Jan. (2012). A subharmonic graphene FET mixer. IEEE Electron Device Letters, 33(1), 71–73. https://doi.org/10.1109/LED.2011.2170655

Habibpour, Omid, He, Zhongxia Simon, Strupinski, Wlodek, Rorsman, Niklas, Ciuk, Tymoteusz, Ciepielewski, Pawel, & Zirath, Herbert. (2017). A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET. IEEE Microwave and Wireless Components Letters, 27(2), 168–170. https://doi.org/10.1109/LMWC.2016.2646998

Habibpour, Omid, Vukusic, Josip, & Stake, Jan. (2013). A 30-GHz integrated subharmonic mixer based on a multichannel graphene FET. IEEE Transactions on Microwave Theory and Techniques, 61(2), 841–847. https://doi.org/10.1109/TMTT.2012.2236434

Han, Shu-Jen, Jenkins, Keith A., Valdes Garcia, Alberto, Franklin, Aaron D., Bol, Ageeth A., & Haensch, Wilfried. (2011). High-frequency graphene voltage amplifier. Nano Letters, 11(9), 3690–3693. https://doi.org/10.1021/nl2016637

Lin, Yen Fu, Xu, Yong, Wang, Sheng Tsung, Li, Song Lin, Yamamoto, Mahito, Aparecido-Ferreira, Alex, Li, Wenwu, Sun, Huabin, Nakaharai, Shu, Jian, Wen Bin, Ueno, Keiji, & Tsukagoshi, Kazuhito. (2014). Ambipolar MoTe2 transistors and their applications in logic circuits. Advanced Materials, 26, 3263–3269. https://doi.org/10.1002/adma.201305845

Maas, Stephen A. (1986). Microwave Mixers. Artech House.

Medina-Rull, Alberto, Pasadas, Francisco, Marin, Enrique G., Toral-Lopez, Alejandro, Cuesta, Juan, Godoy, Andrés, Jiménez, David, Ruiz, Francisco G., Jimélnez, D., & Ruiz, Francisco G. (2020). A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications. IEEE Access, 8, 209055–209063. https://doi.org/10.1109/ACCESS.2020.3038153

Moldovan, Clara F., Vitale, Wolfgang A., Sharma, Pankaj, Tamagnone, Michele, Mosig, Juan R., & Ionescu, Adrian M. (2016). Graphene Quantum Capacitors for High Frequency Tunable Analog Applications. Nano Letters, 16(8), 4746–4753. https://doi.org/10.1021/acs.nanolett.5b05235

Norhakim, Nadia, Hawari, Huzein Fahmi, & Burhanudin, Zainal Arif. (2022). Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology. IEEE Access, 10, 17030–17042. https://doi.org/10.1109/ACCESS.2022.3147832

Pasadas, Francisco, Feijoo, Pedro C., Mavredakis, Nikolaos, Pacheco-Sanchez, Aníbal, Chaves, Ferney A., & Jiménez, David. (2022a). Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors. Advanced Materials, n/a(n/a), 2201691. https://doi.org/https://doi.org/10.1002/adma.202201691

Pasadas, Francisco, Feijoo, Pedro C., Mavredakis, Nikolaos, Pacheco-Sanchez, Aníbal, Chaves, Ferney A., & Jiménez, David. (2022b). Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors. Advanced Materials, n/a(n/a), 2201691. https://doi.org/https://doi.org/10.1002/adma.202201691

Pasadas, Francisco, & Jiménez, David. (2016a). Large-Signal Model of Graphene Field- Effect Transistors—Part II: Circuit Performance Benchmarking. IEEE Transactions on Electron Devices, 63(7), 2942–2947. https://doi.org/10.1109/TED.2016.2563464

Pasadas, Francisco, & Jiménez, David. (2016b). Large-Signal Model of Graphene Field-Effect Transistors - Part I: Compact Modeling of GFET Intrinsic Capacitances. IEEE Transactions on Electron Devices, 63(7), 2936–2941. https://doi.org/10.1109/TED.2016.2570426

Pasadas, Francisco, Medina-Rull, Alberto, Feijoo Guerro, Pedro Carlos, Pacheco-Sanchez, Anibal Uriel, G. Marin, Enrique, G. Ruiz, Francisco, Rodriguez, Noel, Godoy, Andrés, & Jiménez, David. (2021). Unveiling the impact of the bias dependent charge neutrality point on graphene based multi transistor applications. Nano Express. http://iopscience.iop.org/article/10.1088/2632-959X/abfdd0

Pasadas, Francisco, Wei, Wei, Pallecchi, Emiliano, Happy, Henri, & Jiménez, David. (2017). Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances. IEEE Transactions on Electron Devices, 64(11), 4715–4723. https://doi.org/10.1109/TED.2017.2749503

Saeed, Mohamed, Palacios, Paula, Wei, Muh-Dey, Baskent, Eyyub, Fan, Chun-Yu, Uzlu, Burkay, Wang, Kun-Ta, Hemmetter, Andreas, Wang, Zhenxing, Neumaier, Daniel, Lemme, Max C., & Negra, Renato. (2021). Graphene-Based Microwave Circuits: A Review. Advanced Materials, n/a(n/a), 2108473. https://doi.org/https://doi.org/10.1002/adma.202108473

Urban, Francesca, Lupina, Grzegorz, Grillo, Alessandro, Martucciello, Nadia, & Di Bartolomeo, Antonio. (2020). Contact resistance and mobility in back-gate graphene transistors. Nano Express, 1(1), 010001. https://doi.org/10.1088/2632-959x/ab7055

Wang, ZhenXing, Zhang, ZhiYong, & Peng, LianMao. (2012). Graphene-based ambipolar electronics for radio frequency applications. Chinese Science Bulletin, 57(23), 2956–2970. https://doi.org/10.1007/s11434-012-5143-x

Wang, Zhenxing, Zhang, Zhiyong, Xu, Huilong, Ding, Li, Wang, Sheng, & Peng, Lian-Mao. (2010). A high-performance top-gate graphene field-effect transistor based frequency doubler. Applied Physics Letters, 96(17), 173104. https://doi.org/10.1063/1.3413959

Wu, Yanqing, Farmer, Damon B., Zhu, Wenjuan, Han, Shu-Jen, Dimitrakopoulos, Christos D., Bol, Ageeth A., Avouris, Phaedon, & Lin, Yu-Ming. (2012). Three-terminal graphene negative differential resistance devices. ACS Nano, 6(3), 2610–2616. https://doi.org/10.1021/nn205106z

Xia, Jilin, Chen, Fang, Li, Jinghong, & Tao, Nongjian. (2009). Measurement of the quantum capacitance of graphene. Nature Nanotechnology, 4(8), 505–509. https://doi.org/10.1038/nnano.2009.177

Yang, Xuebei, Liu, Guanxiong, Rostami, Masoud, Balandin, Alexander A., & Mohanram, Kartik. (2011). Graphene ambipolar multiplier phase detector. IEEE Electron Device Letters, 32(10), 1328–1330. https://doi.org/10.1109/LED.2011.2162576

Descargas

Publicado

2022-12-29

Cómo citar

Pasadas, F., Medina-Rull, A., & Marín, E. G. (2022). Modelos De Microondas Para Dispositivos Ambipolares De Grafeno: Perspectiva de la docencia universitaria en ingeniería. TECHNO REVIEW. International Technology, Science and Society Review Revista Internacional De Tecnología, Ciencia Y Sociedad, 11(5), 1–11. https://doi.org/10.37467/revtechno.v11.4457

Número

Vol. 11 Núm. 5 (2022): Monográfico: "Innovación de vanguardia a partir de textos académicos pre y post doctorales"

Sección

Artículos de investigación (monográfico)

Licencia

Aquellos autores/as que publiquen en esta revista, aceptan los términos siguientes:

  1. Los autores/as conservarán los derechos morales sobre la obra y cederán a la revista los derechos comerciales.
  2. Transcurrido un año desde su publicación, la versión del editor pasará a estar en acceso abierto en la web de la editorial, pero la revista mantendrá el copyright de la obra.
  3. En el caso de que los autores deseen asignar una licencia abierta Creative Commons (CC), podrán solicitarla escribiendo a publishing@eagora.org